?2000 fairchild semiconductor international september 2000 sgp6n60uf rev. a igbt sgp6n60uf sgp6n60uf ultra-fast igbt general description fairchild's insulated gate bipolar transistor(igbt) uf series provides low conduction and switching losses. uf series is designed for the applications such as motor control and general inverters where high speed switching is required. features high speed switching low saturation voltage : v ce(sat) = 2.1 v @ i c = 3a high input impedance absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgp6n60uf units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c6 a collector current @ t c = 100 c3 a i cm (1) pulsed collector current 25 a p d maximum power dissipation @ t c = 25 c30 w maximum power dissipation @ t c = 100 c12 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc thermal resistance, junction-to-case -- 4.0 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w application ac & dc motor controls, general purpose inverters, robotics, servo controls to-220 g c e g c e g c e
?2000 fairchild semiconductor international sgp6n60uf rev. a sgp6n60uf electrical characteristics of igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 3ma, v ce = v ge 3.5 4.5 6.5 v v ce(sat) collector to emitter saturation voltage i c = 3a , v ge = 15v -- 2.1 2.6 v i c = 6a , v ge = 15v -- 2.6 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 220 -- pf c oes output capacitance -- 22 -- pf c res reverse transfer capacitance -- 7 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 3a, r g = 80 ? , v ge = 15v, inductive load, t c = 25 c -- 15 -- ns t r rise time -- 25 -- ns t d(off) turn-off delay time -- 60 130 ns t f fall time -- 70 150 ns e on turn-on switching loss -- 57 -- uj e off turn-off switching loss -- 25 -- uj e ts total switching loss -- 82 120 uj t d(on) turn-on delay time v cc = 300 v, i c = 3a, r g = 80 ? , v ge = 15v , inductive load, t c = 125 c -- 22 -- ns t r rise time -- 32 -- ns t d(off) turn-off delay time -- 80 200 ns t f fall time -- 122 300 ns e on turn - on switching loss -- 65 -- uj e off turn - off switching loss -- 46 -- uj e ts total switching loss -- 111 170 uj q g total gate charge v ce = 300 v, i c = 3a, v ge = 15v -- 15 22 nc q ge gate-emitter charge -- 5 8 nc q gc gate-collector charge -- 4 6 nc l e internal emitter inductance measured 5mm from pkg -- 7.5 -- nh
?2000 fairchild semiconductor international sgp6n60uf rev. a sgp6n60uf 0 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 125 6a 3a i c = 1.5a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 25 6a 3a i c = 1.5a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 2 4 6 8 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 9w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 0306090120150 0 1 2 3 4 6a 3a i c = 1.5a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 0.5 1 10 0 3 6 9 12 15 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] 02468 0 5 10 15 20 25 30 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge
?2000 fairchild semiconductor international sgp6n60uf rev. a sgp6n60uf 110100400 5 10 100 300 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 3a t c = 25 t c = 125 switching loss [uj] gate resistance, r g [ ? ] 110100400 10 100 common emitter v cc = 300v, v ge = 15v i c = 3a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ ? ] 1 10 100 400 50 100 600 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 3a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ ? ] fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 123456 50 100 500 toff tf common emitter v cc = 300v, v ge = 15v r g = 80 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 123456 10 100 200 ton tr common emitter v cc = 300v, v ge = 15v r g = 80 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 11030 0 50 100 150 200 250 300 350 400 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v]
?2000 fairchild semiconductor international sgp6n60uf rev. a sgp6n60uf 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 50 safe operating area v ge =20v, t c =100 o c collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c fig 17. transient thermal impedance of igbt 03691215 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 100 ? tc = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] 123456 5 10 100 200 eoff eon eon eoff common emitter v cc = 300v, v ge = 15v r g = 80 ? t c = 25 t c = 125 switching loss [uj] collector current, i c [a] 0.3 1 10 100 1000 0.01 0.1 1 10 50 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation ic max. (continuous) ic max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v]
acex? bottomless? coolfet? crossvolt? dome? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pop? powertrench ? qfet? qs? qt optoelectronics? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? ?2000 fairchild semiconductor international trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. f1
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